STGP5H60DF Datasheet and Replacement
Type Designator: STGP5H60DF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 88 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 10.8 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Package: TO220
- IGBT Cross-Reference
STGP5H60DF Datasheet (PDF)
stgb5h60df stgd5h60df stgf5h60df stgp5h60df.pdf
STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DFDatasheetTrench gate field-stop 600 V, 5 A high speed H series IGBTFeaturesTABTAB High-speed switching32311DPAK2 Tight parameter distributionD PAK Safe parallelingTAB Low thermal resistance Short-circuit rated3231 Ultrafast soft recovery antiparallel diode21TO-220TO-220FPAppl
Datasheet: STGB3HF60HD , STGD3HF60HDT4 , STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , IXGH60N60 , STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - STGP5H60DF transistor datasheet
STGP5H60DF cross reference
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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