All IGBT. STGWA40H65DFB Datasheet

 

STGWA40H65DFB IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWA40H65DFB
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G40H65DFB
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 283
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 13
   Collector Capacity (Cc), typ, pF: 198
   Total Gate Charge (Qg), typ, nC: 210
   Package: TO247

 STGWA40H65DFB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWA40H65DFB Datasheet (PDF)

 ..1. Size:526K  st
 stgwa40h65dfb.pdf

STGWA40H65DFB STGWA40H65DFB

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 0.1. Size:527K  st
 stgwa40h65dfb2.pdf

STGWA40H65DFB STGWA40H65DFB

STGWA40H65DFB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

 4.1. Size:431K  st
 stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGWA40H65DFB STGWA40H65DFB

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 6.1. Size:699K  st
 stgwa40h120df2.pdf

STGWA40H65DFB STGWA40H65DFB

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

 6.2. Size:819K  st
 stgw40h120df2 stgwa40h120df2.pdf

STGWA40H65DFB STGWA40H65DFB

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

 6.3. Size:512K  st
 stgwa40hp65fb2.pdf

STGWA40H65DFB STGWA40H65DFB

STGWA40HP65FB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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