STGWA40H65DFB - параметры транзистора, его аналоги, Даташиты

STGWA40H65DFB Datasheet (PDF)

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STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

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STGWA40H65DFB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

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STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

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STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO