All IGBT. STGWA40H65DFB2 Datasheet

 

STGWA40H65DFB2 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWA40H65DFB2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G40H65DFB2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 72 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 10.2 nS
   Coesⓘ - Output Capacitance, typ: 122 pF
   Qgⓘ - Total Gate Charge, typ: 153 nC
   Package: TO247

 STGWA40H65DFB2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWA40H65DFB2 Datasheet (PDF)

 ..1. Size:527K  st
 stgwa40h65dfb2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40H65DFB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

 1.1. Size:526K  st
 stgwa40h65dfb.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 4.1. Size:431K  st
 stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 6.1. Size:699K  st
 stgwa40h120df2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

 6.2. Size:819K  st
 stgw40h120df2 stgwa40h120df2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

 6.3. Size:512K  st
 stgwa40hp65fb2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40HP65FB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

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