Справочник IGBT. STGWA40H65DFB2

 

STGWA40H65DFB2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGWA40H65DFB2
   Тип транзистора: IGBT + Diode
   Маркировка: G40H65DFB2
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 230
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 72
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.55
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 10.2
   Емкость коллектора типовая (Cc), pf: 122
   Общий заряд затвора (Qg), typ, nC: 153
   Тип корпуса: TO247

 Аналог (замена) для STGWA40H65DFB2

 

 

STGWA40H65DFB2 Datasheet (PDF)

 ..1. Size:527K  st
 stgwa40h65dfb2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40H65DFB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

 1.1. Size:526K  st
 stgwa40h65dfb.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 4.1. Size:431K  st
 stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 6.1. Size:699K  st
 stgwa40h120df2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

 6.2. Size:819K  st
 stgw40h120df2 stgwa40h120df2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

 6.3. Size:512K  st
 stgwa40hp65fb2.pdf

STGWA40H65DFB2 STGWA40H65DFB2

STGWA40HP65FB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

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