All IGBT. AFGB40T65SQDN Datasheet

 

AFGB40T65SQDN IGBT. Datasheet pdf. Equivalent


   Type Designator: AFGB40T65SQDN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 238 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 19.2 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 76 nC
   Package: D2PAK

 AFGB40T65SQDN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AFGB40T65SQDN Datasheet (PDF)

 ..1. Size:265K  onsemi
 afgb40t65sqdn.pdf

AFGB40T65SQDN AFGB40T65SQDN

AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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