All IGBT. AFGB40T65SQDN Datasheet

 

AFGB40T65SQDN IGBT. Datasheet pdf. Equivalent


   Type Designator: AFGB40T65SQDN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 238
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 19.2
   Collector Capacity (Cc), typ, pF: 50
   Total Gate Charge (Qg), typ, nC: 76
   Package: D2PAK

 AFGB40T65SQDN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AFGB40T65SQDN Datasheet (PDF)

 ..1. Size:265K  onsemi
 afgb40t65sqdn.pdf

AFGB40T65SQDN AFGB40T65SQDN

AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT

Datasheet: STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , NCE80TD65BT , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC .

 

 
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