AFGB40T65SQDN PDF and Equivalents Search

 

AFGB40T65SQDN Specs and Replacement

Type Designator: AFGB40T65SQDN

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 238 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 19.2 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: D2PAK

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AFGB40T65SQDN datasheet

 ..1. Size:265K  onsemi
 afgb40t65sqdn.pdf pdf_icon

AFGB40T65SQDN

AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, D2PAK Features Maximum Junction Temperature TJ = 175 C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 Qualified C These Devices are Pb-Free and are RoHS Compliant T... See More ⇒

Specs: STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , SGP30N60 , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC .

History: VS-GB75LA60UF | SKM145GAX123D | VS-GB400AH120U | STGF30M65DF2 | VS-GB50LP120N | AP50G60SW | SKM145GAR123D

Keywords - AFGB40T65SQDN transistor spec

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