All IGBT. AFGY160T65SPD-B4 Datasheet

 

AFGY160T65SPD-B4 IGBT. Datasheet pdf. Equivalent


   Type Designator: AFGY160T65SPD-B4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 882
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 240
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 197
   Collector Capacity (Cc), typ, pF: 450
   Total Gate Charge (Qg), typ, nC: 163
   Package: TO247

 AFGY160T65SPD-B4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AFGY160T65SPD-B4 Datasheet (PDF)

 0.1. Size:2590K  onsemi
 afgy160t65spd-b4.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.2. Size:1591K  onsemi
 afgy120t65spd-b4.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.3. Size:339K  onsemi
 afgy100t65spd.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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