All IGBT. AFGY160T65SPD-B4 Datasheet

 

AFGY160T65SPD-B4 Datasheet and Replacement


   Type Designator: AFGY160T65SPD-B4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 197 nS
   Coesⓘ - Output Capacitance, typ: 450 pF
   Qgⓘ - Total Gate Charge, typ: 163 nC
   Package: TO247
      - IGBT Cross-Reference

 

AFGY160T65SPD-B4 Datasheet (PDF)

 0.1. Size:2590K  onsemi
 afgy160t65spd-b4.pdf pdf_icon

AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf pdf_icon

AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.2. Size:1591K  onsemi
 afgy120t65spd-b4.pdf pdf_icon

AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.3. Size:339K  onsemi
 afgy100t65spd.pdf pdf_icon

AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

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History: MG25Q6ES51 | 7MBR75U2B060

Keywords - AFGY160T65SPD-B4 transistor datasheet

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