Справочник IGBT. AFGY160T65SPD-B4

 

AFGY160T65SPD-B4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AFGY160T65SPD-B4
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 882 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 240 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.3 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 197 nS
   Coesⓘ - Выходная емкость, типовая: 450 pF
   Qgⓘ - Общий заряд затвора, typ: 163 nC
   Тип корпуса: TO247

 Аналог (замена) для AFGY160T65SPD-B4

 

 

AFGY160T65SPD-B4 Datasheet (PDF)

 0.1. Size:2590K  onsemi
 afgy160t65spd-b4.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.2. Size:1591K  onsemi
 afgy120t65spd-b4.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.3. Size:339K  onsemi
 afgy100t65spd.pdf

AFGY160T65SPD-B4 AFGY160T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

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