AFGY160T65SPD-B4 - параметры транзистора, его аналоги, Даташиты

AFGY160T65SPD-B4 Datasheet (PDF)

0.1. Size:2590K onsemi
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Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

9.1. Size:340K onsemi
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Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

9.2. Size:1591K onsemi
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Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

9.3. Size:339K onsemi
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Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

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