FGA50S110P Specs and Replacement
Type Designator: FGA50S110P
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.06 V @25℃
tr ⓘ - Rise Time, typ: 294 nS
Coesⓘ - Output Capacitance, typ: 47.8 pF
Package: TO3PN
FGA50S110P Substitution - IGBTⓘ Cross-Reference Search
FGA50S110P datasheet
fga50s110p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fga50n100bntd.pdf
November 2008 tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. Th... See More ⇒
fga50n100bntd2.pdf
February 2009 tm FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F... See More ⇒
fga50n100bnt.pdf
March 2009 tm FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant ... See More ⇒
Specs: FGA3060ADF, FGA30S120P, FGA30T65SHD, FGA40S65SH, FGA40T65SHD, FGA40T65SHDF, FGA40T65UQDF, FGA5065ADF, SGT40N60FD2PT, FGA6530WDF, FGA6540WDF, FGAF30S65AQ, FGAF40N60SMD, FGAF40S65AQ, FGB20N60SFD-F085, FGB3040CS, FGI3040G2-F085
Keywords - FGA50S110P transistor spec
FGA50S110P cross reference
FGA50S110P equivalent finder
FGA50S110P lookup
FGA50S110P substitution
FGA50S110P replacement
History: IXRA15N120
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