FGA50S110P PDF and Equivalents Search

 

FGA50S110P Specs and Replacement

Type Designator: FGA50S110P

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.06 V @25℃

tr ⓘ - Rise Time, typ: 294 nS

Coesⓘ - Output Capacitance, typ: 47.8 pF

Package: TO3PN

 FGA50S110P Substitution

- IGBTⓘ Cross-Reference Search

 

FGA50S110P datasheet

 ..1. Size:428K  onsemi
fga50s110p.pdf pdf_icon

FGA50S110P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:676K  fairchild semi
fga50n100bntd.pdf pdf_icon

FGA50S110P

November 2008 tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. Th... See More ⇒

 9.2. Size:811K  fairchild semi
fga50n100bntd2.pdf pdf_icon

FGA50S110P

February 2009 tm FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F... See More ⇒

 9.3. Size:702K  fairchild semi
fga50n100bnt.pdf pdf_icon

FGA50S110P

March 2009 tm FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant ... See More ⇒

Specs: FGA3060ADF, FGA30S120P, FGA30T65SHD, FGA40S65SH, FGA40T65SHD, FGA40T65SHDF, FGA40T65UQDF, FGA5065ADF, SGT40N60FD2PT, FGA6530WDF, FGA6540WDF, FGAF30S65AQ, FGAF40N60SMD, FGAF40S65AQ, FGB20N60SFD-F085, FGB3040CS, FGI3040G2-F085

Keywords - FGA50S110P transistor spec

 FGA50S110P cross reference
 FGA50S110P equivalent finder
 FGA50S110P lookup
 FGA50S110P substitution
 FGA50S110P replacement

 

 

 

 

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