All IGBT. FGA50S110P Datasheet

 

FGA50S110P Datasheet and Replacement


   Type Designator: FGA50S110P
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.06 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 294 nS
   Coesⓘ - Output Capacitance, typ: 47.8 pF
   Package: TO3PN
      - IGBT Cross-Reference

 

FGA50S110P Datasheet (PDF)

 ..1. Size:428K  onsemi
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FGA50S110P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:676K  fairchild semi
fga50n100bntd.pdf pdf_icon

FGA50S110P

November 2008tmFGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. Th

 9.2. Size:811K  fairchild semi
fga50n100bntd2.pdf pdf_icon

FGA50S110P

February 2009tmFGA50N100BNTD21000V, 50A NPT-Trench IGBT CO-PAKFeatures General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F

 9.3. Size:702K  fairchild semi
fga50n100bnt.pdf pdf_icon

FGA50S110P

March 2009tmFGA50N100BNT1000V, 50A NPT-Trench IGBT CO-PAKFeatures General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant

Datasheet: FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF , FGA5065ADF , MBQ50T65FESC , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 .

History: FGH40N65UFDTU-F085 | IKQ100N60T | IGW40T120 | IXGK120N120B3 | IXGX12N90C | IXGH17N100U1 | IXGP12N100AU1

Keywords - FGA50S110P transistor datasheet

 FGA50S110P cross reference
 FGA50S110P equivalent finder
 FGA50S110P lookup
 FGA50S110P substitution
 FGA50S110P replacement

 

 
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