FGA50S110P IGBT. Datasheet pdf. Equivalent

   Type Designator: FGA50S110P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 300
   Maximum Collector-Emitter Voltage |Vce|, V: 1100
   Maximum Gate-Emitter Voltage |Vge|, V: 25
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.06
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 294
   Collector Capacity (Cc), typ, pF: 47.8
   Total Gate Charge (Qg), typ, nC: 195
   Package: TO3PN

FGA50S110P Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGA50S110P Datasheet (PDF)

..1. Size:428K onsemi
fga50s110p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:676K fairchild semi
fga50n100bntd.pdf

November 2008tmFGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. Th

9.2. Size:811K fairchild semi
fga50n100bntd2.pdf

February 2009tmFGA50N100BNTD21000V, 50A NPT-Trench IGBT CO-PAKFeatures General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F

9.3. Size:702K fairchild semi
fga50n100bnt.pdf

March 2009tmFGA50N100BNT1000V, 50A NPT-Trench IGBT CO-PAKFeatures General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant

9.4. Size:346K onsemi
fga50n100bntd.pdf