FGA50S110P - аналоги, основные параметры, даташиты
Наименование: FGA50S110P
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1100 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.06 V @25℃
tr ⓘ - Время нарастания типовое: 294 nS
Coesⓘ - Выходная емкость, типовая: 47.8 pF
Тип корпуса: TO3PN
Аналог (замена) для FGA50S110P
- подбор ⓘ IGBT транзистора по параметрам
FGA50S110P даташит
fga50s110p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga50n100bntd.pdf
November 2008 tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. Th
fga50n100bntd2.pdf
February 2009 tm FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F
fga50n100bnt.pdf
March 2009 tm FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant
Другие IGBT... FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF , FGA5065ADF , SGT40N60FD2PT , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 .
History: IXXP50N60B3 | SKM500GA123S | FGA180N33AT | SKM500GA174D
History: IXXP50N60B3 | SKM500GA123S | FGA180N33AT | SKM500GA174D
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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