FGB3040CS IGBT. Datasheet pdf. Equivalent
Type Designator: FGB3040CS
Type: IGBT + Built-in Zener Diodes
Marking Code: 3040CS
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic|ⓘ - Maximum Collector Current: 21 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 1500 nS
Qgⓘ - Total Gate Charge, typ: 15 nC
Package: TO-263-6
FGB3040CS Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGB3040CS Datasheet (PDF)
fgb3040cs.pdf
FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit
afgb30t65sqdn.pdf
AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical
fgb3056-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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