FGB3040CS Specs and Replacement
Type Designator: FGB3040CS
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic| ⓘ - Maximum Collector Current: 21 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
tr ⓘ - Rise Time, typ: 1500 nS
Package: TO-263-6 FGB3040CS Substitution - IGBTⓘ Cross-Reference Search
FGB3040CS datasheet
fgb3040cs.pdf
FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p... See More ⇒
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features www.onsemi.com SCIS Energy = 300 mJ at TJ = 25 C Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free and are RoHS Compliant Applications R1 GATE Automotive Ignition Coil Driver Circuits R2 High Current Ignit... See More ⇒
afgb30t65sqdn.pdf
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical ... See More ⇒
Specs: FGA5065ADF, FGA50S110P, FGA6530WDF, FGA6540WDF, FGAF30S65AQ, FGAF40N60SMD, FGAF40S65AQ, FGB20N60SFD-F085, GT30F125, FGI3040G2-F085, FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085, FGB3056-F085, FGB3236-F085, FGI3236-F085, FGB3440G2-F085
Keywords - FGB3040CS transistor spec
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History: APT65GP60L2DF2
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