FGB3040CS IGBT. Datasheet pdf. Equivalent
Type Designator: FGB3040CS
Type: IGBT
Marking Code: 3040CS
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 150
Maximum Collector-Emitter Voltage |Vce|, V: 430
Maximum Gate-Emitter Voltage |Vge|, V: 10
Maximum Collector Current |Ic| @25℃, A: 21
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.3
Maximum G-E Threshold Voltag |VGE(th)|, V: 2.2
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 1500
Total Gate Charge (Qg), typ, nC: 15
Package: TO-263-6
FGB3040CS Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGB3040CS Datasheet (PDF)
fgb3040cs.pdf
FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit
afgb30t65sqdn.pdf
AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical
fgb3056-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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