FGB3040CS - аналоги, основные параметры, даташиты
Наименование: FGB3040CS
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 430 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 21 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
tr ⓘ - Время нарастания типовое: 1500 nS
Тип корпуса: TO-263-6
Аналог (замена) для FGB3040CS
- подбор ⓘ IGBT транзистора по параметрам
FGB3040CS даташит
fgb3040cs.pdf
FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features www.onsemi.com SCIS Energy = 300 mJ at TJ = 25 C Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free and are RoHS Compliant Applications R1 GATE Automotive Ignition Coil Driver Circuits R2 High Current Ignit
afgb30t65sqdn.pdf
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical
Другие IGBT... FGA5065ADF , FGA50S110P , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , GT30F125 , FGI3040G2-F085 , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 .
History: SKM200GAY173D | 6MBP100VDA120-50 | SKM400GAL124D
History: SKM200GAY173D | 6MBP100VDA120-50 | SKM400GAL124D
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