FGI3040G2-F085 PDF and Equivalents Search

 

FGI3040G2-F085 Specs and Replacement

Type Designator: FGI3040G2-F085

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V

|Ic| ⓘ - Maximum Collector Current: 41 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃

tr ⓘ - Rise Time, typ: 1900 nS

Package: I2PAK

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FGI3040G2-F085 datasheet

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FGI3040G2-F085

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Specs: FGA50S110P, FGA6530WDF, FGA6540WDF, FGAF30S65AQ, FGAF40N60SMD, FGAF40S65AQ, FGB20N60SFD-F085, FGB3040CS, IXRH40N120, FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085, FGB3056-F085, FGB3236-F085, FGI3236-F085, FGB3440G2-F085, FGD3440G2-F085

Keywords - FGI3040G2-F085 transistor spec

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History: APT65GP60L2DF2

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