All IGBT. FGI3040G2-F085 Datasheet

 

FGI3040G2-F085 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGI3040G2-F085
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 1900 nS
   Qgⓘ - Total Gate Charge, typ: 21 nC
   Package: I2PAK

 FGI3040G2-F085 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGI3040G2-F085 Datasheet (PDF)

 ..1. Size:1340K  onsemi
 fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

FGI3040G2-F085 FGI3040G2-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Datasheet: FGA50S110P , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , BT15T120ANF , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 .

 

 
Back to Top