FGB3040G2-F085C PDF and Equivalents Search

 

FGB3040G2-F085C Specs and Replacement

Type Designator: FGB3040G2-F085C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V

|Ic| ⓘ - Maximum Collector Current: 37.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃

tr ⓘ - Rise Time, typ: 1900 nS

Package: D2PAK

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FGB3040G2-F085C datasheet

 ..1. Size:1340K  onsemi
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FGB3040G2-F085C

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒

 0.1. Size:961K  onsemi
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FGB3040G2-F085C

FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features www.onsemi.com SCIS Energy = 300 mJ at TJ = 25 C Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free and are RoHS Compliant Applications R1 GATE Automotive Ignition Coil Driver Circuits R2 High Current Ignit... See More ⇒

 7.1. Size:864K  onsemi
fgb3040cs.pdf pdf_icon

FGB3040G2-F085C

FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p... See More ⇒

 9.1. Size:151K  onsemi
afgb30t65sqdn.pdf pdf_icon

FGB3040G2-F085C

AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical ... See More ⇒

Specs: FGD3440G2-F085, FGP3440G2-F085, FGB40T65SPD-F085, FGB5N60UNDF, FGB7N60UNDF, FGD2736G3-F085, FGD2736G3-F085V, FGD3040G2-F085C, GT30F124, FGD3040G2-F085V, FGD3050G2, FGD3050G2V, FGD3245G2-F085, FGB3245G2-F085, FGD3245G2-F085C, FGD3245G2-F085V, FGD3325G2-F085

Keywords - FGB3040G2-F085C transistor spec

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