All IGBT. FGB3040G2-F085C Datasheet

 

FGB3040G2-F085C Datasheet and Replacement


   Type Designator: FGB3040G2-F085C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
   |Ic|ⓘ - Maximum Collector Current: 37.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 1900 nS
   Package: D2PAK
      - IGBT Cross-Reference

 

FGB3040G2-F085C Datasheet (PDF)

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FGB3040G2-F085C

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.1. Size:961K  onsemi
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FGB3040G2-F085C

FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit

 7.1. Size:864K  onsemi
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FGB3040G2-F085C

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p

 9.1. Size:151K  onsemi
afgb30t65sqdn.pdf pdf_icon

FGB3040G2-F085C

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGT200DA120D3 | MMG75SR120UZA | IGB30N60T | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | HGTP10N120BN

Keywords - FGB3040G2-F085C transistor datasheet

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