Справочник IGBT. FGB3040G2-F085C

 

FGB3040G2-F085C - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGB3040G2-F085C
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 150
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 400
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 10
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 37.5
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.15
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 2.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 1900
   Общий заряд затвора (Qg), typ, nC: 21
   Тип корпуса: D2PAK

 Аналог (замена) для FGB3040G2-F085C

 

 

FGB3040G2-F085C Datasheet (PDF)

 ..1. Size:1340K  onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

FGB3040G2-F085C FGB3040G2-F085C

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.1. Size:961K  onsemi
fgd3040g2-f085c fgb3040g2-f085c.pdf

FGB3040G2-F085C FGB3040G2-F085C

FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit

 7.1. Size:864K  onsemi
fgb3040cs.pdf

FGB3040G2-F085C FGB3040G2-F085C

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p

 9.1. Size:151K  onsemi
afgb30t65sqdn.pdf

FGB3040G2-F085C FGB3040G2-F085C

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

 9.2. Size:2955K  onsemi
fgb3056-f085.pdf

FGB3040G2-F085C FGB3040G2-F085C

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Другие IGBT... FGD3440G2-F085 , FGP3440G2-F085 , FGB40T65SPD-F085 , FGB5N60UNDF , FGB7N60UNDF , FGD2736G3-F085 , FGD2736G3-F085V , FGD3040G2-F085C , GT30F124 , FGD3040G2-F085V , FGD3050G2 , FGD3050G2V , FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 .

 

 
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