FGD3440G2-F085V IGBT. Datasheet pdf. Equivalent
Type Designator: FGD3440G2-F085V
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 166 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic|ⓘ - Maximum Collector Current: 26.9 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 2000 nS
Qgⓘ - Total Gate Charge, typ: 24 nC
Package: DPAK
FGD3440G2-F085V Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGD3440G2-F085V Datasheet (PDF)
fgb3440g2-f085 fgd3440g2-f085 fgp3440g2-f085.pdf
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fgd3440g2-f085v.pdf
EcoSPARK) 2 N-ChannelIgnition IGBT335 mJ, 400 VFGD3440G2-F085VFeatures SCIS Energy = 335 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coil on Plug Applic
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