FGD3440G2-F085V Datasheet and Replacement
Type Designator: FGD3440G2-F085V
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 166 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic| ⓘ - Maximum Collector Current: 26.9 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 2000 nS
Package: DPAK
FGD3440G2-F085V substitution
FGD3440G2-F085V Datasheet (PDF)
fgb3440g2-f085 fgd3440g2-f085 fgp3440g2-f085.pdf

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fgd3440g2-f085v.pdf

EcoSPARK) 2 N-ChannelIgnition IGBT335 mJ, 400 VFGD3440G2-F085VFeatures SCIS Energy = 335 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coil on Plug Applic
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MG12300D-BA1MM
Keywords - FGD3440G2-F085V transistor datasheet
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FGD3440G2-F085V substitution
FGD3440G2-F085V replacement
History: MG12300D-BA1MM



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