All IGBT. FGH40T65SHDF Datasheet

 

FGH40T65SHDF IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH40T65SHDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 268
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 27
   Collector Capacity (Cc), typ, pF: 70
   Total Gate Charge (Qg), typ, nC: 68
   Package: TO247

 FGH40T65SHDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40T65SHDF Datasheet (PDF)

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 fgh40t65shdf.pdf

FGH40T65SHDF FGH40T65SHDF

May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device

 ..2. Size:900K  onsemi
 fgh40t65shdf.pdf

FGH40T65SHDF FGH40T65SHDF

FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 3.1. Size:1508K  onsemi
 fgh40t65shd-f155.pdf

FGH40T65SHDF FGH40T65SHDF

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 fgh40t65sh.pdf

FGH40T65SHDF FGH40T65SHDF

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

 5.1. Size:662K  onsemi
 fgh40t65sqd.pdf

FGH40T65SHDF FGH40T65SHDF

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 5.2. Size:3131K  onsemi
 fgh40t65spd-f085.pdf

FGH40T65SHDF FGH40T65SHDF

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

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