FGH40T65SHDF IGBT. Datasheet pdf. Equivalent
Type Designator: FGH40T65SHDF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Qgⓘ - Total Gate Charge, typ: 68 nC
Package: TO247
FGH40T65SHDF Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH40T65SHDF Datasheet (PDF)
fgh40t65shdf.pdf
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fgh40t65sh.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ
fgh40t65sqd.pdf
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fgh40t65spd-f085.pdf
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Datasheet: FGH40N60SMDF-F085 , FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , IRGP4086 , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 .
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