Справочник IGBT. FGH40T65SHDF

 

FGH40T65SHDF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGH40T65SHDF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 268
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.45
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 27
   Емкость коллектора типовая (Cc), pf: 70
   Общий заряд затвора (Qg), typ, nC: 68
   Тип корпуса: TO247

 Аналог (замена) для FGH40T65SHDF

 

 

FGH40T65SHDF Datasheet (PDF)

 ..1. Size:915K  1
 fgh40t65shdf.pdf

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May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device

 ..2. Size:900K  onsemi
 fgh40t65shdf.pdf

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FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 3.1. Size:1508K  onsemi
 fgh40t65shd-f155.pdf

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 4.1. Size:475K  onsemi
 fgh40t65sh.pdf

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IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

 5.1. Size:662K  onsemi
 fgh40t65sqd.pdf

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IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 5.2. Size:3131K  onsemi
 fgh40t65spd-f085.pdf

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IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

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