IXGH17N100A PDF and Equivalents Search

 

IXGH17N100A Specs and Replacement

Type Designator: IXGH17N100A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 34 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO247

 IXGH17N100A Substitution

- IGBT ⓘ Cross-Reference Search

 

IXGH17N100A datasheet

 ..1. Size:48K  ixys
 ixgh17n100a.pdf pdf_icon

IXGH17N100A

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C... See More ⇒

 0.1. Size:76K  ixys
 ixgh17n100au1.pdf pdf_icon

IXGH17N100A

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V High speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A G = Gate, C = Collector, IC90... See More ⇒

 4.1. Size:76K  ixys
 ixgh17n100u1.pdf pdf_icon

IXGH17N100A

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V High speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A G = Gate, C = Collector, IC90... See More ⇒

 4.2. Size:48K  ixys
 ixgh17n100.pdf pdf_icon

IXGH17N100A

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C... See More ⇒

SHOW MORE

Specs: IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , SGT50T65FD1PT , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B .

Keywords - IXGH17N100A transistor spec

 IXGH17N100A cross reference
 IXGH17N100A equivalent finder
 IXGH17N100A lookup
 IXGH17N100A substitution
 IXGH17N100A replacement

 

 

 

 

↑ Back to Top
.