FGH40T65UQDF Specs and Replacement
Type Designator: FGH40T65UQDF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 231 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.33 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO247
FGH40T65UQDF Substitution - IGBTⓘ Cross-Reference Search
FGH40T65UQDF datasheet
fgh40t65uqdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer superior conduction and www.onsemi.com switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction VCES IC heating and MWO. 650... See More ⇒
fgh40t65upd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ = 175... See More ⇒
fgh40t65shdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒
fgh40t65sqd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 40 A Max Junction Te... See More ⇒
Specs: FGH40T120SMDL4, FGH40T120SQDNL4, FGH40T65SH, FGH40T65SHDF, FGH40T65SHD-F155, FGH40T65SPD-F085, FGH40T65SQD, FGH40T65UPD, IRG7R313U, FGH40T70SHD, FGH50T65UPD, FGH60N60SFDTU-F085, FGH60N60UFDTU-F085, FGH60T65SHD, FGH60T65SQD-F155, FGH75T65SHD, FGH75T65SHDT
Keywords - FGH40T65UQDF transistor spec
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History: NCE40TH60BPF
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