FGH40T65UQDF - аналоги, основные параметры, даташиты
Наименование: FGH40T65UQDF
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 231 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.33 V @25℃
tr ⓘ - Время нарастания типовое: 18 nS
Coesⓘ - Выходная емкость, типовая: 58 pF
Тип корпуса: TO247
Аналог (замена) для FGH40T65UQDF
- подбор ⓘ IGBT транзистора по параметрам
FGH40T65UQDF даташит
fgh40t65uqdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer superior conduction and www.onsemi.com switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction VCES IC heating and MWO. 650
fgh40t65upd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ = 175
fgh40t65shdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features
fgh40t65sqd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 40 A Max Junction Te
Другие IGBT... FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , IRG7R313U , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT .
History: NCE40TD65B
History: NCE40TD65B
🌐 : EN ES РУ
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa1491 | 2sc1313 datasheet | 2sc984 | 2sa872 | 2sc1222 | 2sc2581 | c1061 transistor | 2sc1451








