All IGBT. FGPF4565 Datasheet

 

FGPF4565 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGPF4565
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 30
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 25
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.35
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 44.8
   Collector Capacity (Cc), typ, pF: 34
   Total Gate Charge (Qg), typ, nC: 40.3
   Package: TO220F

 FGPF4565 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGPF4565 Datasheet (PDF)

 ..1. Size:367K  onsemi
 fgpf4565.pdf

FGPF4565 FGPF4565

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:713K  fairchild semi
 fgpf4536.pdf

FGPF4565 FGPF4565

August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoH

 8.2. Size:313K  fairchild semi
 fgpf4533.pdf

FGPF4565 FGPF4565

August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching

 9.1. Size:419K  fairchild semi
 fgpf4633.pdf

FGPF4565 FGPF4565

August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching R

Datasheet: FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , TGPF30N43P , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 .

 

 
Back to Top