FGPF4565 PDF and Equivalents Search

 

FGPF4565 Specs and Replacement

Type Designator: FGPF4565

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 44.8 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: TO220F

 FGPF4565 Substitution

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FGPF4565 datasheet

 ..1. Size:367K  onsemi
fgpf4565.pdf pdf_icon

FGPF4565

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:713K  fairchild semi
fgpf4536.pdf pdf_icon

FGPF4565

August 2010 FGPF4536 360V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of Low saturation voltage VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are High input impedance essential. Fast switching RoH... See More ⇒

 8.2. Size:313K  fairchild semi
fgpf4533.pdf pdf_icon

FGPF4565

August 2010 FGPF4533 330V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. High input impedance Fast switching ... See More ⇒

 9.1. Size:419K  fairchild semi
fgpf4633.pdf pdf_icon

FGPF4565

August 2010 FGPF4633 330V PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. High input impedance Fast switching R... See More ⇒

Specs: FGHL50T65SQ, FGHL50T65SQDT, FGHL75T65LQDT, FGHL75T65MQD, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, GT30F133, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2

Keywords - FGPF4565 transistor spec

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