FGPF4565 - аналоги, основные параметры, даташиты
Наименование: FGPF4565
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.35 V @25℃
tr ⓘ - Время нарастания типовое: 44.8 nS
Coesⓘ - Выходная емкость, типовая: 34 pF
Тип корпуса: TO220F
Аналог (замена) для FGPF4565
- подбор ⓘ IGBT транзистора по параметрам
FGPF4565 даташит
fgpf4565.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgpf4536.pdf
August 2010 FGPF4536 360V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of Low saturation voltage VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are High input impedance essential. Fast switching RoH
fgpf4533.pdf
August 2010 FGPF4533 330V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. High input impedance Fast switching
fgpf4633.pdf
August 2010 FGPF4633 330V PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. High input impedance Fast switching R
Другие IGBT... FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , GT30F133 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 .
History: SKM200GAY173D | 6MBP100VDA120-50 | SKM400GAL124D
History: SKM200GAY173D | 6MBP100VDA120-50 | SKM400GAL124D
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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