Справочник IGBT. FGPF4565

 

FGPF4565 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGPF4565
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 30
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 25
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.35
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 44.8
   Емкость коллектора типовая (Cc), pf: 34
   Общий заряд затвора (Qg), typ, nC: 40.3
   Тип корпуса: TO220F

 Аналог (замена) для FGPF4565

 

 

FGPF4565 Datasheet (PDF)

 ..1. Size:367K  onsemi
 fgpf4565.pdf

FGPF4565 FGPF4565

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:713K  fairchild semi
 fgpf4536.pdf

FGPF4565 FGPF4565

August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoH

 8.2. Size:313K  fairchild semi
 fgpf4533.pdf

FGPF4565 FGPF4565

August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching

 9.1. Size:419K  fairchild semi
 fgpf4633.pdf

FGPF4565 FGPF4565

August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching R

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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