All IGBT. FGY40T120SMD Datasheet

 

FGY40T120SMD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGY40T120SMD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 370 nC
   Package: TO247

 FGY40T120SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGY40T120SMD Datasheet (PDF)

 ..1. Size:656K  onsemi
 fgy40t120smd.pdf

FGY40T120SMD FGY40T120SMD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGH75T65UPD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A .

 

 
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