FGY40T120SMD PDF and Equivalents Search

 

FGY40T120SMD Specs and Replacement

Type Designator: FGY40T120SMD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 882 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO247

 FGY40T120SMD Substitution

- IGBTⓘ Cross-Reference Search

 

FGY40T120SMD datasheet

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FGY40T120SMD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGHL75T65MQD, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, IKW40T120, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2, FPF2C8P2NL07A, FPF2G120BF07AS, HGT1S7N60A4S9A

Keywords - FGY40T120SMD transistor spec

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