NGTB15N135IHRWG Datasheet and Replacement
Type Designator: NGTB15N135IHRWG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 357
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 30
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.15
V @25℃
Tjⓘ -
Maximum Junction Temperature: 175
℃
Coesⓘ - Output Capacitance, typ: 87
pF
Package:
TO247
- IGBT Cross-Reference
NGTB15N135IHRWG Datasheet (PDF)
1.1. Size:194K onsemi
ngtb15n135ihr.pdf 
NGTB15N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
6.1. Size:185K onsemi
ngtb15n120flwg.pdf
NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
6.2. Size:175K onsemi
ngtb15n120lwg.pdf
NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
6.3. Size:124K onsemi
ngtb15n120ih.pdf
NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200
6.4. Size:175K onsemi
ngtb15n120ihr.pdf
NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
6.5. Size:267K onsemi
ngtb15n120fl2wg.pdf
NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on
6.6. Size:175K onsemi
ngtb15n120l.pdf
NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
6.7. Size:172K onsemi
ngtb15n120ihl.pdf
NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
6.8. Size:233K onsemi
ngtb15n120fl2.pdf
NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
6.9. Size:185K onsemi
ngtb15n120fl.pdf
NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
6.10. Size:175K onsemi
ngtb15n120ihrwg.pdf
NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
6.11. Size:124K onsemi
ngtb15n120ihwg.pdf
NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200
Datasheet: ISL9V5036P3
, ISL9V5036S3
, ISL9V5045S3S
, ISL9V5045S3
, ISL9V5045S3ST-F085
, NGTB03N60R2DT4G
, NGTB05N60R2DT4G
, NGTB10N60R2DT4G
, RJH60F7BDPQ-A0
, NGTB15N60S1EG
, NGTB25N120FL3WG
, NGTB40N120L3WG
, NGTB40N65FL2WG
, NGTG15N60S1EG
, 2A200HB12C2F
, 2A300HB12C2F
, 2A400HB12C2F
.
History: IXXH100N60B3
Keywords - NGTB15N135IHRWG transistor datasheet
NGTB15N135IHRWG cross reference
NGTB15N135IHRWG equivalent finder
NGTB15N135IHRWG lookup
NGTB15N135IHRWG substitution
NGTB15N135IHRWG replacement
