NGTB15N135IHRWG PDF Specs and Replacement
Type Designator: NGTB15N135IHRWG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 357
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic| ⓘ - Maximum Collector Current: 30
A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175
℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.15
V @25℃
Coesⓘ - Output Capacitance, typ: 87
pF
Package:
TO247
NGTB15N135IHRWG Substitution
-
IGBT ⓘ Cross-Reference Search
NGTB15N135IHRWG PDF specs
1.1. Size:194K onsemi
ngtb15n135ihr.pdf 
NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
6.1. Size:185K onsemi
ngtb15n120flwg.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒
6.2. Size:175K onsemi
ngtb15n120lwg.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
6.3. Size:124K onsemi
ngtb15n120ih.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 ... See More ⇒
6.4. Size:175K onsemi
ngtb15n120ihr.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
6.5. Size:267K onsemi
ngtb15n120fl2wg.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒
6.6. Size:175K onsemi
ngtb15n120l.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
6.7. Size:172K onsemi
ngtb15n120ihl.pdf
NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
6.8. Size:233K onsemi
ngtb15n120fl2.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒
6.9. Size:185K onsemi
ngtb15n120fl.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒
6.10. Size:175K onsemi
ngtb15n120ihrwg.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
6.11. Size:124K onsemi
ngtb15n120ihwg.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 ... See More ⇒
Specs: ISL9V5036P3
, ISL9V5036S3
, ISL9V5045S3S
, ISL9V5045S3
, ISL9V5045S3ST-F085
, NGTB03N60R2DT4G
, NGTB05N60R2DT4G
, NGTB10N60R2DT4G
, IRGB20B60PD1
, NGTB15N60S1EG
, NGTB25N120FL3WG
, NGTB40N120L3WG
, NGTB40N65FL2WG
, NGTG15N60S1EG
, 2A200HB12C2F
, 2A300HB12C2F
, 2A400HB12C2F
.
History: IRGB15B60KD
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