NGTB15N135IHRWG - параметры транзистора, его аналоги, Даташиты

NGTB15N135IHRWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

   Наименование: NGTB15N135IHRWG
   Тип транзистора: IGBT + Diode
   Маркировка: 15N135IHR
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 357
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1350
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.15
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Емкость коллектора типовая (Cc), pf: 87
   Общий заряд затвора (Qg), typ, nC: 156
   Тип корпуса: TO247

Аналог (замена) для NGTB15N135IHRWG

NGTB15N135IHRWG Datasheet (PDF)

0.1. Size:1122K onsemi
ngtb15n135ihrwg.pdf

1.1. Size:194K onsemi
ngtb15n135ihr.pdf

NGTB15N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

6.1. Size:185K onsemi
ngtb15n120flwg.pdf

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

6.2. Size:175K onsemi
ngtb15n120lwg.pdf

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

6.3. Size:124K onsemi
ngtb15n120ih.pdf

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

6.4. Size:175K onsemi
ngtb15n120ihr.pdf

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

6.5. Size:267K onsemi
ngtb15n120fl2wg.pdf

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

6.6. Size:175K onsemi
ngtb15n120l.pdf

6.7. Size:172K onsemi
ngtb15n120ihl.pdf

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

6.8. Size:233K onsemi
ngtb15n120fl2.pdf