2SH18 Datasheet and Replacement
Type Designator: 2SH18
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 120 nS
Package: TO220AB
- IGBT Cross-Reference
2SH18 Datasheet (PDF)
2sh18.pdf

ADE208291 (Z)2SH18Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO220ABHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate12. Collector233. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , GT30F125 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 .
History: TT040K120EQ | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | VS-ETL015Y120H | DM2G50SH6N | IXGT40N60C2D1
Keywords - 2SH18 transistor datasheet
2SH18 cross reference
2SH18 equivalent finder
2SH18 lookup
2SH18 substitution
2SH18 replacement
History: TT040K120EQ | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | VS-ETL015Y120H | DM2G50SH6N | IXGT40N60C2D1



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