All IGBT. AIGW40N65H5 Datasheet

 

AIGW40N65H5 IGBT. Datasheet pdf. Equivalent


   Type Designator: AIGW40N65H5
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 250
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 74
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.66
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 11
   Collector Capacity (Cc), typ, pF: 43
   Package: TO247

 AIGW40N65H5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AIGW40N65H5 Datasheet (PDF)

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 aigw40n65h5.pdf

AIGW40N65H5 AIGW40N65H5

AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Datasheet: NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , GT30J124 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT .

 

 
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