AIGW40N65H5 PDF and Equivalents Search

 

AIGW40N65H5 Specs and Replacement

Type Designator: AIGW40N65H5

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 74 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃

tr ⓘ - Rise Time, typ: 11 nS

Coesⓘ - Output Capacitance, typ: 43 pF

Package: TO247

 AIGW40N65H5 Substitution

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AIGW40N65H5 datasheet

 ..1. Size:1787K  infineon
 aigw40n65h5.pdf pdf_icon

AIGW40N65H5

AIGW40N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature... See More ⇒

Specs: NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , FGH40N60UFD , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - AIGW40N65H5 transistor spec

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