All IGBT. AIGW40N65H5 Datasheet

 

AIGW40N65H5 Datasheet and Replacement


   Type Designator: AIGW40N65H5
   Type: IGBT
   Marking Code: AG40EH5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 74 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qgⓘ - Total Gate Charge, typ: 92 nC
   Package: TO247
      - IGBT Cross-Reference

 

AIGW40N65H5 Datasheet (PDF)

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AIGW40N65H5

AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300Q060B6EN

Keywords - AIGW40N65H5 transistor datasheet

 AIGW40N65H5 cross reference
 AIGW40N65H5 equivalent finder
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