All IGBT. AIGW40N65H5 Datasheet

 

AIGW40N65H5 Datasheet and Replacement


   Type Designator: AIGW40N65H5
   Type: IGBT
   Marking Code: AG40EH5
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 74 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qg ⓘ - Total Gate Charge, typ: 92 nC
   Package: TO247
 

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AIGW40N65H5 Datasheet (PDF)

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AIGW40N65H5

AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: OM6526SA | IXGP24N60C4D1 | AP30G120ASW | IXXH50N60B3 | BLG40T65FDL-W | IRG4PC50UPBF | 2MBI100N-120

Keywords - AIGW40N65H5 transistor datasheet

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