AIHD04N60R Datasheet and Replacement
Type Designator: AIHD04N60R
Type: IGBT + Anti-Parallel Diode
Marking Code: AH04DR
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 18 pF
Qgⓘ - Total Gate Charge, typ: 27 nC
Package: TO252
- IGBT Cross-Reference
AIHD04N60R Datasheet (PDF)
aihd04n60r.pdf

AIHD04N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
aihd06n60r.pdf

AIHD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
Datasheet: NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , GT50JR22 , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT .
History: MID150-12A4 | IKQ100N60T | 1MBI300F-060 | IXGK120N120B3 | IXGX12N90C | IXGP12N100AU1 | IXGH17N100U1
Keywords - AIHD04N60R transistor datasheet
AIHD04N60R cross reference
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History: MID150-12A4 | IKQ100N60T | 1MBI300F-060 | IXGK120N120B3 | IXGX12N90C | IXGP12N100AU1 | IXGH17N100U1



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