AIHD04N60R PDF and Equivalents Search

 

AIHD04N60R Specs and Replacement

Type Designator: AIHD04N60R

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 8 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 8 nS

Coesⓘ - Output Capacitance, typ: 18 pF

Package: TO252

 AIHD04N60R Substitution

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AIHD04N60R datasheet

 ..1. Size:1928K  infineon
 aihd04n60r.pdf pdf_icon

AIHD04N60R

AIHD04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution ... See More ⇒

 9.1. Size:1918K  infineon
 aihd06n60r.pdf pdf_icon

AIHD04N60R

AIHD06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution ... See More ⇒

Specs: NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , GT30J124 , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT .

Keywords - AIHD04N60R transistor spec

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