AIHD06N60R Datasheet and Replacement
Type Designator: AIHD06N60R
Type: IGBT + Anti-Parallel Diode
Marking Code: AH06DR
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 7 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Qg ⓘ - Total Gate Charge, typ: 48 nC
Package: TO252
AIHD06N60R substitution
AIHD06N60R Datasheet (PDF)
aihd06n60r.pdf

AIHD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
aihd04n60r.pdf

AIHD04N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGX50N60C2D1 | T2250AB25E | 1MBC05-060 | IXGK50N60C2D1 | IHW25N120E1 | NGTB20N120IHRWG | MBN600GR12A
Keywords - AIHD06N60R transistor datasheet
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History: IXGX50N60C2D1 | T2250AB25E | 1MBC05-060 | IXGK50N60C2D1 | IHW25N120E1 | NGTB20N120IHRWG | MBN600GR12A



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