AIKQ100N60CT PDF and Equivalents Search

 

AIKQ100N60CT Specs and Replacement

Type Designator: AIKQ100N60CT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 714 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 360 pF

Package: TO247

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AIKQ100N60CT datasheet

 ..1. Size:1940K  infineon
 aikq100n60ct.pdf pdf_icon

AIKQ100N60CT

AIKQ100N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Sho... See More ⇒

 9.1. Size:1926K  infineon
 aikq120n60ct.pdf pdf_icon

AIKQ100N60CT

AIKQ120N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Sho... See More ⇒

Specs: AIGW50N65H5, AIHD04N60R, AIHD06N60R, AIHD10N60R, AIHD15N60R, AIHD15N60RF, AIKB20N60CT, AIKP20N60CT, RJP30H2A, AIKQ120N60CT, AIKW20N60CT, AIKW30N60CT, AIKW40N65DF5, AIKW40N65DH5, AIKW50N60CT, AIKW50N65DF5, AIKW50N65DH5

Keywords - AIKQ100N60CT transistor spec

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