AIKQ100N60CT Datasheet and Replacement
Type Designator: AIKQ100N60CT
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 714 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 360 pF
Package: TO247
AIKQ100N60CT substitution
AIKQ100N60CT Datasheet (PDF)
aikq100n60ct.pdf
AIKQ100N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho
aikq120n60ct.pdf
AIKQ120N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG200DR060UZK
Keywords - AIKQ100N60CT transistor datasheet
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History: MMG200DR060UZK
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