All IGBT. AIKQ100N60CT Datasheet

 

AIKQ100N60CT Datasheet and Replacement


   Type Designator: AIKQ100N60CT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 714 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 360 pF
   Package: TO247
      - IGBT Cross-Reference

 

AIKQ100N60CT Datasheet (PDF)

 ..1. Size:1940K  infineon
 aikq100n60ct.pdf pdf_icon

AIKQ100N60CT

AIKQ100N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho

 9.1. Size:1926K  infineon
 aikq120n60ct.pdf pdf_icon

AIKQ100N60CT

AIKQ120N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho

Datasheet: AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , FGH60N60SMD , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 .

History: FGP3040G2-F085 | SGP10N60RUF | MGW20N120 | MWI30-12E6K | MUBW75-17T8 | IXSP10N60B2D1 | IXGK100N170

Keywords - AIKQ100N60CT transistor datasheet

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