AIKQ120N60CT IGBT. Datasheet pdf. Equivalent
Type Designator: AIKQ120N60CT
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 833 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 446 pF
Package: TO247
AIKQ120N60CT Transistor Equivalent Substitute - IGBT Cross-Reference Search
AIKQ120N60CT Datasheet (PDF)
aikq120n60ct.pdf
AIKQ120N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho
aikq100n60ct.pdf
AIKQ100N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho
Datasheet: AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , RJP30E2DPP-M0 , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT .
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