DDB6U30N08VR Specs and Replacement
Type Designator: DDB6U30N08VR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 26 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Package: MODULE DDB6U30N08VR Substitution - IGBTⓘ Cross-Reference Search
DDB6U30N08VR datasheet
ddb6u30n08vr.pdf
Technische Information / technical information IGBT-Module DDB6U30N08VR IGBT-modules Diode-Gleichrichter / diode-rectifier Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Periodische R ckw. Spitzensperrspannung T = 25 C V 800 V repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Dio. T = 80 C I 30 A forward current RMS maximum p... See More ⇒
ddb6u134n16rr-b11.pdf
Technische Information / Technical Information IGBT-Modul DDB6U134N16RR_B11 IGBT-Module EconoPACK 2 Modul mit Low Loss IGBT2 und Emitter Controlled Diode und PressFIT / NTC EconoPACK 2 module with Low Loss IGBT2 and Emitter Controlled diode and PressFIT / NTC V = 1600V CES I = 134A / I = 268A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary ... See More ⇒
ddb6u180n16rrp-b37.pdf
DDB6U180N16RRP_B37 EconoPACK 2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoPACK 2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / pre-applied Thermal Interface Material V = 1600V CES I = 180A / I = 360A C nom CRM Potentielle Anwendungen Potential Applications... See More ⇒
ddb6u75n16w1r.pdf
Technische Information / Technical Information IGBT-Module DDB6U75N16W1R IGBT-modules Vorl ufige Daten Diode, Gleichrichter / Diode, Rectifier Preliminary Data H chstzul ssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25 C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 100 C I 65 A C FRMSM Maximum RMS forw... See More ⇒
Specs: AIKW75N60CT, AUIRGP4062D-E, AUIRGP4063D-E, AUIRGPS4070D0, BSM150GB60QQQ, DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, IRG7IC28U, DDB6U75N16W1R, DF1000R17IE4D-B2, DF150R12RT4, DF200R12KE3, DF200R12PT4-B6, DF300R12KE3, DF400R12KE3, DF900R12IP4D
Keywords - DDB6U30N08VR transistor spec
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History: SKM50GDL063DL
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