All IGBT. IXGH22N50C Datasheet

 

IXGH22N50C Datasheet and Replacement


   Type Designator: IXGH22N50C
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 44 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 117 pF
   Qg ⓘ - Total Gate Charge, typ: 55 nC
   Package: TO247
 

 IXGH22N50C substitution

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IXGH22N50C Datasheet (PDF)

 5.1. Size:195K  ixys
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IXGH22N50C

 5.2. Size:547K  ixys
 ixgh22n50bu1.pdf pdf_icon

IXGH22N50C

 7.1. Size:56K  ixys
 ixgh22n170.pdf pdf_icon

IXGH22N50C

Advance Technical DataHigh Voltage IXGH 22N170 VCES = 1700 VIXGT 22N170 IC25 = 40 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C44 ATO-247 AD (IXGH)IC90 TC = 90C22 AICM TC

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Datasheet: IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , RJP63F3DPP-M0 , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A .

History: IXGH20N60B

Keywords - IXGH22N50C transistor datasheet

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