IXGH22N50C Datasheet and Replacement
Type Designator: IXGH22N50C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 44 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 117 pF
Package: TO247
- IGBT Cross-Reference
IXGH22N50C Datasheet (PDF)
ixgh22n170.pdf

Advance Technical DataHigh Voltage IXGH 22N170 VCES = 1700 VIXGT 22N170 IC25 = 40 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C44 ATO-247 AD (IXGH)IC90 TC = 90C22 AICM TC
Datasheet: IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , FGH60N60SFD , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A .
History: MGP7N60E | SGP5N60RUF | IXGH15N120CD1 | IXEH25N120D1 | MGP7N60ED | FGH40N60SFDTU-F085 | RGTH40TS65D
Keywords - IXGH22N50C transistor datasheet
IXGH22N50C cross reference
IXGH22N50C equivalent finder
IXGH22N50C lookup
IXGH22N50C substitution
IXGH22N50C replacement
History: MGP7N60E | SGP5N60RUF | IXGH15N120CD1 | IXEH25N120D1 | MGP7N60ED | FGH40N60SFDTU-F085 | RGTH40TS65D



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