IXGH22N50C PDF and Equivalents Search

 

IXGH22N50C Specs and Replacement

Type Designator: IXGH22N50C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 44 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 117 pF

Package: TO247

 IXGH22N50C Substitution

- IGBT ⓘ Cross-Reference Search

 

IXGH22N50C datasheet

 5.1. Size:195K  ixys
 ixgh22n50b.pdf pdf_icon

IXGH22N50C

... See More ⇒

 5.2. Size:547K  ixys
 ixgh22n50bu1.pdf pdf_icon

IXGH22N50C

... See More ⇒

 7.1. Size:56K  ixys
 ixgh22n170.pdf pdf_icon

IXGH22N50C

Advance Technical Data High Voltage IXGH 22N170 VCES = 1700 V IXGT 22N170 IC25 = 40 A IGBT VCE(sat) = 3.3 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C44 A TO-247 AD (IXGH) IC90 TC = 90 C22 A ICM TC ... See More ⇒

SHOW MORE

Specs: IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , GT30F126 , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A .

Keywords - IXGH22N50C transistor spec

 IXGH22N50C cross reference
 IXGH22N50C equivalent finder
 IXGH22N50C lookup
 IXGH22N50C substitution
 IXGH22N50C replacement

 

 

 

 

↑ Back to Top
.