DF1000R17IE4D-B2 Specs and Replacement
Type Designator: DF1000R17IE4D-B2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 6250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1390 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE DF1000R17IE4D-B2 Substitution - IGBTⓘ Cross-Reference Search
DF1000R17IE4D-B2 datasheet
df1000r17ie4d-b2.pdf
Technische Information / Technical Information IGBT-Module DF1000R17IE4D_B2 IGBT-modules PrimePACK 3 Modul und NTC PrimePACK 3 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hilfsumr... See More ⇒
df1000r17ie4.pdf
DF1000R17IE4 PrimePACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter ... See More ⇒
Specs: AUIRGP4063D-E, AUIRGPS4070D0, BSM150GB60QQQ, DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR, DDB6U75N16W1R, IRGP4063D, DF150R12RT4, DF200R12KE3, DF200R12PT4-B6, DF300R12KE3, DF400R12KE3, DF900R12IP4D, DF900R12IP4DV, F3L100R07W2E3-B11
Keywords - DF1000R17IE4D-B2 transistor spec
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History: SKM50GDL063DL
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