DF200R12PT4-B6 PDF and Equivalents Search

 

DF200R12PT4-B6 Specs and Replacement

Type Designator: DF200R12PT4-B6

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Package: MODULE

 DF200R12PT4-B6 Substitution

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DF200R12PT4-B6 datasheet

 ..1. Size:833K  infineon
 df200r12pt4-b6.pdf pdf_icon

DF200R12PT4-B6

Technische Information / Technical Information IGBT-Module DF200R12PT4_B6 IGBT-modules EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoPACK 4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli... See More ⇒

 3.1. Size:1029K  infineon
 df200r12pt4 b6.pdf pdf_icon

DF200R12PT4-B6

/ Technical Information IGBT- DF200R12PT4_B6 IGBT-modules EconoPACK 4 / IGBT4 and diode and NTC EconoPACK 4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C... See More ⇒

 6.1. Size:945K  infineon
 df200r12w1h3 b27.pdf pdf_icon

DF200R12PT4-B6

/ Technical Information IGBT- DF200R12W1H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 30A / I = 60A C nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al ... See More ⇒

 6.2. Size:166K  infineon
 df200r12ke3.pdf pdf_icon

DF200R12PT4-B6

Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules H chstzul ssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung Tvj= 25 C VCES 1200 V collector emitter voltage 200 A Kollektor Dauergleichstrom Tc= 80 C IC, nom DC collector current Tc= 25 C IC 295 A Periodischer Kollektor Spitzenst... See More ⇒

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Specs: DDB2U30N08VR, DDB6U134N16RR-B11, DDB6U180N16RR-B11, DDB6U30N08VR, DDB6U75N16W1R, DF1000R17IE4D-B2, DF150R12RT4, DF200R12KE3, GT30G124, DF300R12KE3, DF400R12KE3, DF900R12IP4D, DF900R12IP4DV, F3L100R07W2E3-B11, F3L100R12W2H3-B11, F3L150R07W2E3-B11, F3L150R12W2H3-B11

Keywords - DF200R12PT4-B6 transistor spec

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