DF200R12PT4-B6 - аналоги, параметры транзистора

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Technische Information / Technical Information IGBT-Module DF200R12PT4_B6 IGBT-modules EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoPACK 4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

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/ Technical Information IGBT- DF200R12PT4_B6 IGBT-modules EconoPACK 4 / IGBT4 and diode and NTC EconoPACK 4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C

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/ Technical Information IGBT- DF200R12W1H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 30A / I = 60A C nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al

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Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules H chstzul ssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung Tvj= 25 C VCES 1200 V collector emitter voltage 200 A Kollektor Dauergleichstrom Tc= 80 C IC, nom DC collector current Tc= 25 C IC 295 A Periodischer Kollektor Spitzenst