DF300R12KE3 IGBT. Datasheet pdf. Equivalent

   Type Designator: DF300R12KE3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 1470
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 480
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 90
   Total Gate Charge (Qg), typ, nC: 2800
   Package: MODULE

DF300R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

DF300R12KE3 Datasheet (PDF)

..1. Size:167K infineon
df300r12ke3.pdf

Technische Information / technical informationIGBT-ModuleDF300R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage300 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 480 APeriodischer Kollektor Spitzenst

..2. Size:165K eupec
df300r12ke3.pdf

8.1. Size:1042K infineon
df300r07pe4 b6.pdf

/ Technical InformationIGBT-DF300R07PE4_B6IGBT-modulesEconoPACK4 /IGBT4 NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRM Typical Applications

Datasheet: DDB6U134N16RR-B11 , DDB6U180N16RR-B11 , DDB6U30N08VR , DDB6U75N16W1R , DF1000R17IE4D-B2 , DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 , STGB10NB37LZ , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , F3L15R12W2H3-B27 .

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All IGBT. DF300R12KE3 Datasheet

DF300R12KE3 IGBT. Datasheet pdf. Equivalent

DF300R12KE3 Datasheet (PDF)

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AllTransistors(C)2015