DF400R12KE3 Datasheet and Replacement
Type Designator: DF400R12KE3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 580 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 90 nS
Qgⓘ - Total Gate Charge, typ: 3700 nC
Package: MODULE
- IGBT Cross-Reference
DF400R12KE3 Datasheet (PDF)
df400r12ke3.pdf

Technische Information / Technical InformationIGBT-ModuleDF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CES
df400r07pe4r b6.pdf

Technische Information / Technical InformationIGBT-ModuleDF300R07PE4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications An
Datasheet: DDB6U180N16RR-B11 , DDB6U30N08VR , DDB6U75N16W1R , DF1000R17IE4D-B2 , DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 , DF300R12KE3 , MBQ50T65FDSC , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , F3L100R12W2H3-B11 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , F3L25R12W1T4-B27 .
History: DGTD65T60S2PT | DF900R12IP4D
Keywords - DF400R12KE3 transistor datasheet
DF400R12KE3 cross reference
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History: DGTD65T60S2PT | DF900R12IP4D



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