F3L300R12MT4-B22 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L300R12MT4-B22
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 1550
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 450
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 50
Total Gate Charge (Qg), typ, nC: 2250
Package: MODULE
F3L300R12MT4-B22 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L300R12MT4-B22 Datasheet (PDF)
f3l300r12mt4-b22.pdf
Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3
f3l300r12mt4p-b23.pdf
F3L300R12MT4P_B23EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-
f3l300r12mt4p-b22.pdf
F3L300R12MT4P_B22EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-
f3l300r12mt4 b22.pdf
Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3
f3l300r12mt4 b23.pdf
Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B23IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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