FB20R06W1E3-B11 IGBT. Datasheet pdf. Equivalent
Type Designator: FB20R06W1E3-B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 94
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 29
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 13
Total Gate Charge (Qg), typ, nC: 200
Package: MODULE
FB20R06W1E3-B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FB20R06W1E3-B11 Datasheet (PDF)
fb20r06w1e3-b11.pdf
Technische Information / Technical InformationIGBT-ModuleFB20R06W1E3_B11IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 20A / I = 40AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters
fb20r06w1e3 b11.pdf
/ Technical InformationIGBT-FB20R06W1E3_B11IGBT-modulesEasyPIM /IGBT3 NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 20A / I = 40AC nom CRM Typical Applications Auxiliar
fb20r06w1e3.pdf
Technische Information / Technical InformationIGBT-ModuleFB20R06W1E3IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 20A / I = 40AC nom CRMTypische Anwendungen Typical Applications Hilfs
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ