IGZ100N65H5 Datasheet and Replacement
Type Designator: IGZ100N65H5
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 536 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 161 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 9 nS
Coesⓘ - Output Capacitance, typ: 97 pF
Package: TO247-4
IGZ100N65H5 substitution
IGZ100N65H5 Datasheet (PDF)
igz100n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGZ100N65H5650V IGBT high speed series fifth generationData sheetIndustrial Power ControlIGZ100N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits:High speed H5 technology offering Ultra low loss switching thanks to Kelvin emitter pin incombination with TRENCHSTOP
Datasheet: IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , CRG75T60AK3HD , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 .
History: IRG4BC10K
Keywords - IGZ100N65H5 transistor datasheet
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History: IRG4BC10K
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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