IGZ100N65H5 PDF and Equivalents Search

 

IGZ100N65H5 Specs and Replacement

Type Designator: IGZ100N65H5

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 536 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 161 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 9 nS

Coesⓘ - Output Capacitance, typ: 97 pF

Package: TO247-4

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IGZ100N65H5 datasheet

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IGZ100N65H5

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Specs: IGB20N65S5, IGB50N65H5, IGB50N65S5, IGU04N60T, IGW30N60TP, IGW40N60DTP, IGW50N60TP, IGW75N65H5, GT30F133, IGZ50N65H5, IGZ75N65H5, IHFW40N65R5S, IHW25N120E1, IHW30N120R5, IHW30N135R5, IHW30N160R5, IHW30N65R5

Keywords - IGZ100N65H5 transistor spec

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