IHW30N135R5 IGBT. Datasheet pdf. Equivalent
Type Designator: IHW30N135R5
Type: IGBT + Anti-Parallel Diode
Marking Code: H30PR5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 50 pF
Qgⓘ - Total Gate Charge, typ: 235 nC
Package: TO247
IHW30N135R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHW30N135R5 Datasheet (PDF)
ihw30n135r5.pdf
IHW30N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
ihw30n135r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu
ihw30n110r3 1 2.pdf
IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation
ihw30n100r.pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st
ihw30n100t rev2 7.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem
ihw30n160r2 rev2 1g.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior
ihw30n120r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d
ihw30n100r .pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st
ihw30n120r5.pdf
IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
ihw30n160r5.pdf
IHW30N160R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviorG- low VCEsatE- easy parallel switching capability due to positivetemperature coeffic
ihw30n120r2.pdf
IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior
ihw30n120r2 rev1 5g.pdf
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP
ihw30n110r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N110R3Data sheetIndustrial Power ControlIHW30N110R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only Very tight parameter distribution High ruggedness, tem
ihw30n100t.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem
ihw30n160r2.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior
Datasheet: IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , STGB10NB37LZ , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 .
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