Справочник IGBT. IHW30N135R5

 

IHW30N135R5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IHW30N135R5
   Тип транзистора: IGBT + Diode
   Маркировка: H30PR5
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1350 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 50 pF
   Qgⓘ - Общий заряд затвора, typ: 235 nC
   Тип корпуса: TO247

 Аналог (замена) для IHW30N135R5

 

 

IHW30N135R5 Datasheet (PDF)

 ..1. Size:1768K  infineon
ihw30n135r5.pdf

IHW30N135R5
IHW30N135R5

IHW30N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 4.1. Size:1984K  infineon
ihw30n135r3.pdf

IHW30N135R5
IHW30N135R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu

 7.1. Size:1646K  infineon
ihw30n110r3 1 2.pdf

IHW30N135R5
IHW30N135R5

IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation

 7.2. Size:324K  infineon
ihw30n100r.pdf

IHW30N135R5
IHW30N135R5

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

 7.3. Size:313K  infineon
ihw30n100t rev2 7.pdf

IHW30N135R5
IHW30N135R5

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem

 7.4. Size:391K  infineon
ihw30n160r2 rev2 1g.pdf

IHW30N135R5
IHW30N135R5

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior

 7.5. Size:1950K  infineon
ihw30n120r3.pdf

IHW30N135R5
IHW30N135R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d

 7.6. Size:324K  infineon
ihw30n100r .pdf

IHW30N135R5
IHW30N135R5

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

 7.7. Size:1440K  infineon
ihw30n120r5.pdf

IHW30N135R5
IHW30N135R5

IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 7.8. Size:1758K  infineon
ihw30n160r5.pdf

IHW30N135R5
IHW30N135R5

IHW30N160R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviorG- low VCEsatE- easy parallel switching capability due to positivetemperature coeffic

 7.9. Size:579K  infineon
ihw30n120r2.pdf

IHW30N135R5
IHW30N135R5

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior

 7.10. Size:360K  infineon
ihw30n120r2 rev1 5g.pdf

IHW30N135R5
IHW30N135R5

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP

 7.11. Size:2046K  infineon
ihw30n110r3.pdf

IHW30N135R5
IHW30N135R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N110R3Data sheetIndustrial Power ControlIHW30N110R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only Very tight parameter distribution High ruggedness, tem

 7.12. Size:313K  infineon
ihw30n100t.pdf

IHW30N135R5
IHW30N135R5

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem

 7.13. Size:391K  infineon
ihw30n160r2.pdf

IHW30N135R5
IHW30N135R5

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior

Другие IGBT... IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , STGB10NB37LZ , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 .

 

 
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