All IGBT. IHW40N120R5 Datasheet

 

IHW40N120R5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHW40N120R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H40MR5
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 394
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 175
   Collector Capacity (Cc), typ, pF: 70
   Total Gate Charge (Qg), typ, nC: 310
   Package: TO247

 IHW40N120R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW40N120R5 Datasheet (PDF)

 ..1. Size:1770K  infineon
ihw40n120r5.pdf

IHW40N120R5
IHW40N120R5

IHW40N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 7.1. Size:1767K  infineon
ihw40n135r5.pdf

IHW40N120R5
IHW40N120R5

IHW40N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 8.1. Size:454K  infineon
ihw40n60t.pdf

IHW40N120R5
IHW40N120R5

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution

 8.2. Size:788K  infineon
ihw40n60rf ver2 3g.pdf

IHW40N120R5
IHW40N120R5

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 8.3. Size:2129K  infineon
ihw40n65r5.pdf

IHW40N120R5
IHW40N120R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

 8.4. Size:378K  infineon
ihw40n60t-d20rev2 3.pdf

IHW40N120R5
IHW40N120R5

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes

 8.5. Size:792K  infineon
ihw40n60r 2 4.pdf

IHW40N120R5
IHW40N120R5

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

 8.6. Size:2029K  infineon
ihw40n60rf.pdf

IHW40N120R5
IHW40N120R5

IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp

 8.7. Size:2060K  infineon
ihw40n60r.pdf

IHW40N120R5
IHW40N120R5

IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper

Datasheet: IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , GT30F126 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 .

 

 
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