IHW40N135R5 PDF and Equivalents Search

 

IHW40N135R5 Specs and Replacement

Type Designator: IHW40N135R5

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 394 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

 IHW40N135R5 Substitution

- IGBTⓘ Cross-Reference Search

 

IHW40N135R5 datasheet

 ..1. Size:1767K  infineon
ihw40n135r5.pdf pdf_icon

IHW40N135R5

IHW40N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive ... See More ⇒

 7.1. Size:1770K  infineon
ihw40n120r5.pdf pdf_icon

IHW40N135R5

IHW40N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive ... See More ⇒

 8.1. Size:454K  infineon
ihw40n60t.pdf pdf_icon

IHW40N135R5

IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution ... See More ⇒

 8.2. Size:788K  infineon
ihw40n60rf ver2 3g.pdf pdf_icon

IHW40N135R5

IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for ... See More ⇒

Specs: IGZ75N65H5, IHFW40N65R5S, IHW25N120E1, IHW30N120R5, IHW30N135R5, IHW30N160R5, IHW30N65R5, IHW40N120R5, NGTB75N65FL2, IKA08N65ET6, IKA10N65ET6, IKA15N65ET6, IKB15N65EH5, IKB20N65EH5, IKB30N65EH5, IKB30N65ES5, IKB40N65EF5

Keywords - IHW40N135R5 transistor spec

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History: IKA10N65ET6

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