IHW40N135R5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IHW40N135R5
Тип транзистора: IGBT + Diode
Маркировка: H40PR5
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 394 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1350 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Coesⓘ - Выходная емкость, типовая: 70 pF
Qgⓘ - Общий заряд затвора, typ: 305 nC
Тип корпуса: TO247
Аналог (замена) для IHW40N135R5
IHW40N135R5 Datasheet (PDF)
ihw40n135r5.pdf
IHW40N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
ihw40n120r5.pdf
IHW40N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
ihw40n60t.pdf
IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
ihw40n60rf ver2 3g.pdf
IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
ihw40n65r5.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
ihw40n60t-d20rev2 3.pdf
IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes
ihw40n60r 2 4.pdf
IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici
ihw40n60rf.pdf
IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp
ihw40n60r.pdf
IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper
Другие IGBT... IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , FGL60N100BNTD , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 , IKB40N65EF5 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2