All IGBT. IKP39N65ES5 Datasheet

 

IKP39N65ES5 Datasheet and Replacement


   Type Designator: IKP39N65ES5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K39EES5
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 62 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qg ⓘ - Total Gate Charge, typ: 70 nC
   Package: TO220
 

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IKP39N65ES5 Datasheet (PDF)

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IKP39N65ES5

IKP39N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

Datasheet: IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IRGP4063 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 .

History: APT200GN60B2G

Keywords - IKP39N65ES5 transistor datasheet

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