IKP39N65ES5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP39N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K39EES5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 62 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qgⓘ - Total Gate Charge, typ: 70 nC
Package: TO220
IKP39N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP39N65ES5 Datasheet (PDF)
ikp39n65es5.pdf
IKP39N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked
Datasheet: IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IRG4PC40UD , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 .
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