All IGBT. IKP39N65ES5 Datasheet

 

IKP39N65ES5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKP39N65ES5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K39EES5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 62 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO220

 IKP39N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKP39N65ES5 Datasheet (PDF)

 ..1. Size:1996K  infineon
 ikp39n65es5.pdf

IKP39N65ES5 IKP39N65ES5

IKP39N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

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