All IGBT. IKP39N65ES5 Datasheet

 

IKP39N65ES5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKP39N65ES5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K39EES5
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 188
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 62
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 55
   Total Gate Charge (Qg), typ, nC: 70
   Package: TO220

 IKP39N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKP39N65ES5 Datasheet (PDF)

 ..1. Size:1996K  infineon
 ikp39n65es5.pdf

IKP39N65ES5 IKP39N65ES5

IKP39N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

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