All IGBT. IKQ75N120CS6 Datasheet

 

IKQ75N120CS6 Datasheet and Replacement


   Type Designator: IKQ75N120CS6
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 360 pF
   Package: TO247
 

 IKQ75N120CS6 substitution

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IKQ75N120CS6 Datasheet (PDF)

 ..1. Size:2072K  infineon
 ikq75n120cs6.pdf pdf_icon

IKQ75N120CS6

IKQ75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi

 4.1. Size:1622K  infineon
 ikq75n120ct2.pdf pdf_icon

IKQ75N120CS6

IKQ75N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap

Datasheet: IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , FGH40N60SFD , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP .

Keywords - IKQ75N120CS6 transistor datasheet

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