IKQ75N120CS6 IGBT. Datasheet pdf. Equivalent
Type Designator: IKQ75N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K75MCS6
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 880 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 360 pF
Qgⓘ - Total Gate Charge, typ: 530 nC
Package: TO247
IKQ75N120CS6 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKQ75N120CS6 Datasheet (PDF)
ikq75n120cs6.pdf
IKQ75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
ikq75n120ct2.pdf
IKQ75N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap
Datasheet: IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , FGH40N60SFD , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP .
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