IKQ75N120CS6 IGBT. Datasheet pdf. Equivalent
Type Designator: IKQ75N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K75MCS6
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 880
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 44
Collector Capacity (Cc), typ, pF: 360
Total Gate Charge (Qg), typ, nC: 530
Package: TO247
IKQ75N120CS6 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKQ75N120CS6 Datasheet (PDF)
ikq75n120cs6.pdf
IKQ75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
ikq75n120ct2.pdf
IKQ75N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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