IKY40N120CH3 Datasheet and Replacement
Type Designator: IKY40N120CH3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 235 pF
Package: TO247-4
IKY40N120CH3 substitution
IKY40N120CH3 Datasheet (PDF)
iky40n120ch3.pdf

IKY40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in
iky40n120cs6.pdf

IKY40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie
Datasheet: IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , CRG40T60AN3H , IKY40N120CS6 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 .
History: CRG15T60A03L | IXBT15N170 | MMG200DR120B | HYG30P120H1K1 | 1MBI200N-120 | AOK75B60D1 | MMG300D120B6HN
Keywords - IKY40N120CH3 transistor datasheet
IKY40N120CH3 cross reference
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History: CRG15T60A03L | IXBT15N170 | MMG200DR120B | HYG30P120H1K1 | 1MBI200N-120 | AOK75B60D1 | MMG300D120B6HN



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